- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered promising candidates for high-temperature and high-voltage applications [ 1, 2 ]. Recently, several studies have been …
به خواندن ادامه دهید
A SiC MOSFET basically works with the voltage levels of a Si MOSFET or IGBT, but not at its best parameters. Ideally a SiC MOSFET gets at its gate 20V for being switched on at the minimum RDSon. When …
به خواندن ادامه دهید
In this doctoral project, technologies for 4H-SiC power MOSFETs in the fields of process and model development are investigated. To start with, a 1.2 kV SiC power MOSFETs …
به خواندن ادامه دهید
This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a …
به خواندن ادامه دهید
Introduction 4H-SiC is a wide bandgap material with excellent mate- rial properties, such as high critical electric field, high ther- mal conductivity, and high-temperature operation, …
به خواندن ادامه دهید
Wide Bandgap Materials 4 Radical innovation for Power Electronics Si GaN 4H-SiC E g (eV) –Band gap 1.1 3.4 3.3 V s (cm/s) – Electron saturation velocity 1x10 72.2x10 2x107 ε r –dielectric constant 11.8 10 9.7 E c (V/cm) –Critical electric field 3x105 2.2x106 2.5x106 k (W/cm K) thermal conductivity 1.5 1.7 5 E c low on resistance E g low leakage, high Tj k …
به خواندن ادامه دهید
Our range of products is available in discrete housing as well as modules in 650 V, 1200 V, 1700 V and 2000 V voltage classes. Our range of CoolSiC™ MOSFETs includes Silicon Carbide MOSFET discretes and Silicon Carbide MOSFET modules. The SiC MOSFET power modules come in 3-level, fourpack, half-bridge, sixpack, and booster configurations.
به خواندن ادامه دهید
A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics Abstract: In this article, a recessed source …
به خواندن ادامه دهید
Abstract. A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p-region is proposed.The features of the carrier transport in the epitaxial buried channel are …
به خواندن ادامه دهید
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can …
به خواندن ادامه دهید
4H-SiC MOSFET！. （SUNY Poly）4H-（SiC）（MOSFET）。. 0.3μm、2.5μm7.7mΩ-cm2450V。. IEEE Transactions OnElectron ...
به خواندن ادامه دهید
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO 2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The capacitors, subjected to a standard post deposition annealing process in N 2 O, exhibited …
به خواندن ادامه دهید
A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared ...
به خواندن ادامه دهید
Instead, mobility values as low as 6 cm 2 /Vs with the same MOS processing on < 0001 > 4H-SiC are obtained. It must be mentioned that the thermal oxide growth rate is faster on the < 11–20 > face by a factor of 3–5. Other technical aspects include using wet oxidation instead of dry oxidation in the case of < 11–20 > orientation, while dry ...
به خواندن ادامه دهید
In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in …
به خواندن ادامه دهید
In recent years 4H-SiC has found wide-ranging applications in power electronics, thanks to its attractive electro-thermal properties and the continuous advances in its processing technology [].Nevertheless, the performance of conventional vertical planar MOSFETs grown on the Si-face is still limited by the high density of states D it at the …
به خواندن ادامه دهید
the 4H-SiC(0-33-8) lateral MOSFET was 60 cm2/Vs or more. In the case of the lateral MOSFET on 4H-SiC(0001) with a p-well doping of 5 × 1017 cm-3, the channel mobility decreases significantly (typical value is 10 cm2/Vs or less(9)). This particular characteristic (the normally-off character-
به خواندن ادامه دهید
However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
به خواندن ادامه دهید
1．4H-SiCのとの－4H-SiCはという をつため,にがある。ウェーハのさの やがく,パワーデバイスにしたをす。 Anisotropy of carrier mobility and breakdown voltage
به خواندن ادامه دهید
4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 …
به خواندن ادامه دهید
affects the dynamic behavior of SiC MOSFETs due to the well-known Miller effect [11,12]. The C gd of a SiC planar MOSFET consists of the gate oxide capacitance on the top of the JFET region and the depletion capacitance of the JFET region and drift layer [13]. The results in Figure3show that the Dod-cell MOSFET has a higher C gd than the …
به خواندن ادامه دهید
power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion ... 2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime
به خواندن ادامه دهید
4H-SiC Split-Gate Octagonal MOSFET Kijeong Han and B. J. Baliga, Life Fellow, IEEE Abstract—A 1.2 kV rated 4H-SiC Split-Gate Octagonal cell MOSFET (SG-OCTFET) is proposed and successfully fabricated in a 6-inch foundry for the first time. The measured results quantify the benefits of the SG-OCTFET structure: improvement
به خواندن ادامه دهید
Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s−1 and a subthreshold swing of 160 mV/dec. The fabricated devices utilised a forming gas (3% H2 in N2) anneal immediately …
به خواندن ادامه دهید
In spite of the promising aspects of SiC-MOSFETs with Ba-incorporated interfacial layers, very few cases of Ba-MEO have been reported so far. Previous research was done with limited conditions (Ba thickness ranging from 0.6 to 0.8 nm and MEO at 900 or 950°C). 17 Moreover, regarding mobility enhancement mechanisms, there has been …
به خواندن ادامه دهید
Structure of 4H-SiC vertical DMOSFET with parameters, doping concentration profile and resistances. Measurement snapshot using Sony/Tektronix (371A) high power curve tracer. I D − V D family ...
به خواندن ادامه دهید
4H- and 6H- Silicon Carbide in Power MOSFET Design By Md Hasanuzzaman Department of Electrical & Computer Engineering The University of Tennessee, Knoxville April 7, …
به خواندن ادامه دهید
In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the …
به خواندن ادامه دهید
Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and ...
به خواندن ادامه دهید